Comparison of Monte Carlo simulations and analytical models for the calculation of implantation profiles in multilayer targets

In this paper, a new analytical model for the description of lateral spread of implanted ions is compared to Monte Carlo simulations and to the older model by Ishiwara et al. To account for different stopping powers in mask and substrate, a scaling proportional to the projected ranges is used and leads to superior results in comparison to the old analytic model. The agreement with the Monte Carlo data is very good also in cases of large differences in the stopping powers.