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Comparison of lifetime measurements from the Zerbst and the dispersion techniques.

Lebensdauermessungen nach der Zerbst-Methode und der Dispersions-Technik - ein Vergleich
 
: Klausmann, E.; Fahrner, W.R.; Löffler, S.; Neitzert, H.C.

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Journal of the Electrochemical Society 140 (1993), No.8, pp.2323-2327
ISSN: 0013-4651
English
Journal Article
Fraunhofer IAF ()
Halbleitermeßtechnik; Minoritätsträger-Lebensdauer; minority carrier lifetime; semiconductor measuring technique; Zerbst method; Zerbst-Methode

Abstract
The admittance of metal oxide semiconductor (MOS) diode after switching from inversion to deep depletion is calculated. Special attention is given to the final stationary state in inversion conditions. For this state the relaxation equations must be modified because the usually assumed large signal carrier deficits are not valid. The results of these dispersion measurements are compared with the conventional Zerbst technique. Good agreement is obtained. The dispersion technique is a valuable tool for determining very short lifetimes.

: http://publica.fraunhofer.de/documents/PX-8201.html