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Comparison of five methods in determination of parasitic resistances in ion implanted GaAs FETs

 
: Baureis, P.; Zimmer, T.

5th International Conference Quality in Electronic Components: Failure Prevention, Detection and Analysis 1991. Associated with 2nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Bordeaux, 1991
pp.467-474
International Conference Quality in Electronic Components: Failure Prevention, Detection and Analysis <5, 1991, Bordeaux>
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <2, 1991, Bordeaux>
English
Conference Paper
Fraunhofer IIS A ( IIS) ()
GaAs; gallium arsenide; MESFET; parasitärer Widerstand; parasitic resistance

Abstract
Five techniques in measuring the parasitic resistances of GaAs FETs are presented. The most accurate methods described in this paper require high gate currrents to reduce the influence of the metal-semiconductor contact resistance. A new method is developed, which avoids high gate currents and takes the nonuniform doping profiles of ion implanted MESFETs into account. No device degradation during the measurements and additional information about the device performance are the main advantages of this method. All techniques are tested on nine different test structures fabricated at the Siemens research laboratory. The measurements are performed with HP test equipment consisting of 4142B, 4280A and 8510B hardware and TECAP, ICCAP and MDS software.

: http://publica.fraunhofer.de/documents/PX-8193.html