Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Comparison between surface channel PMOS transistors processed with optical and X-ray lithography with regard to X-ray damage
| Microelectronic engineering 11 (1990), No.1-4, pp.259-262
ISSN: 0167-9317 |
| International Conference on Microlithography: Microcircuit Engineering (ME) <15, 1989, Cambridge> |
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| English |
| Conference Paper |
| Fraunhofer ISIT () |
| photolithography; X-ray effects; X-ray lithography |
Abstract
In order to determine the influence of X-ray induced radiation damages, surface channel PMOS devices with partially scaled 0.5 mu m design rules were fabricated using optical and X-ray lithography. With a gate oxide thickness dox=10 nm the X-ray processed transistors show a threshold voltage shift Delta VT=-10 mV, whereas transistors with dox=20 nm show a VT shift of Delta VT=-40 mV relative to optically processed devices. The degradation under hot carrier injection in terms of deviations of Delta gm, Delta VT, Delta ID and Delta S is almost identical for both types of transistors and is of the order of 4%.