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Comparative study of the SbGa heteroantisite and off-center OAs in GaAs

Vergleichende Untersuchung des SbGa Antisite und des "Off Center" OAs Defektes in GaAs
: Hendorfer, G.; Bohl, B.; Fuchs, F.; Kaufmann, U.; Kunzer, M.


Physical Review. B 46 (1992), No.16, pp.10450-10452 : Abb.,Tab.,Lit.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Journal Article
Fraunhofer IAF ()
DLTS; GaAs; MCD-ESR; oxygen; SbGa

The (O/plus) donor level of the SbsubGa heteroantisite and the off-center OsubAs-induced EL3 level in GaAs have very similar thermal emission rates for electrons and are therefore difficult to distinguish by deeplevel transient spectroscopy (DLTS). It is shown that a reliable DLTS assessment of the SbsubGa level is nevertheless possible if additional quantitative information about SbsubGa and EL3 is obtained from magnetic resonance and local vibrational mode spectroscopy, respectively.