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1987
Conference Paper
Titel
Combined photoluminescence and near-infrared transmission imaging for GaAs wafer inspection and process control
Alternative
Waferprüfung und Prozeßüberwachung von GaAs mittels kombinierter Photolumineszenz- und nah-infrarot-Transmissionsdarstellung
Abstract
Two optical topographical methods will be described. Results for as-grown, whole-ingot annealed, ion-implanted wafers and for epitaxial layers will be reported and discussed with special emphasis on the applicability to device production. The mechanism which generates the contrast in luminescence imaging will be discussed in detail.