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  4. CO2-laser annealing of ion implanted silicon - relaxation characteristics of metastable concentrations
 
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1983
Book Article
Title

CO2-laser annealing of ion implanted silicon - relaxation characteristics of metastable concentrations

Author(s)
Goetzlich, J.
Tsien, P.H.
Henghuber, G.
Ryssel, H.
Mainwork
Ion implantation. Equipment and techniques  
Language
English
IFT  
Keyword(s)
  • Dotierung

  • implantation

  • Laserannealing

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