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CO2-laser annealing of ion implanted silicon - relaxation characteristics of metastable concentrations
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1983
Book Article
Title
CO2-laser annealing of ion implanted silicon - relaxation characteristics of metastable concentrations
Author(s)
Goetzlich, J.
Tsien, P.H.
Henghuber, G.
Ryssel, H.
Mainwork
Ion implantation. Equipment and techniques
Language
English
IFT
Keyword(s)
Dotierung
implantation
Laserannealing