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1996
Conference Paper
Titel
CMOS/SIMOX-RF-frontend for 1.7 GHz
Abstract
The cointegration of high-speed NMOS devices and inductive elements by means of a SIMOX-technology with high-resistive substrates enables operating frequencies which meet the needs of modern communication systems. This paper describes a RF frontend operating in the frequency range 1.4 to 1.9GHz. The performance of the presented circuit proves the capability of this technology to realize complete RF-systems on a single chip.