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1991
Journal Article
Titel
CMOS-compatible magnetic field sensors fabricated in standard and in silicon on insulator technologies
Abstract
The properties of some different magnetic field sensors, fabricated on a 2 fm n-well CMOS process, are discussed. Lateral magnetotransistors sensing magnetic fields parallel and perpendicular to the chip surface achieve field resolution in the range 1 fT/sqrt(Hz) at the 1 kHz centre frequency. Relative sensilities up to 50%/T and 8%/T are found. The field resolution of n-channel split-drain MAGFETs, detecting fields perpendicular to the chip surface, are found to be lower by a factor of ten. Magnetotransistors and MAGFETs are also fabricated in silicon on insulator (SOI) technology. This paper gives a first report focused on the realization and the sensor properties.
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