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CMOS-compatible magnetic field sensors fabricated in standard and in silicon on insulator technologies

: Gottfried-Gottfried, R.; Mokwa, W.; Zimmer, G.

Sensors and Actuators. A 25 (1991), No.1-3, pp.753-757
ISSN: 0924-4247
Eurosensors <4, 1990, Karlsruhe>
Conference Paper
Fraunhofer IMS ()
CMOS-Sensor; Magnetfeldsensor; Rauschen; silicon-on-insulator; SIMOX

The properties of some different magnetic field sensors, fabricated on a 2 fm n-well CMOS process, are discussed. Lateral magnetotransistors sensing magnetic fields parallel and perpendicular to the chip surface achieve field resolution in the range 1 fT/sqrt(Hz) at the 1 kHz centre frequency. Relative sensilities up to 50%/T and 8%/T are found. The field resolution of n-channel split-drain MAGFETs, detecting fields perpendicular to the chip surface, are found to be lower by a factor of ten. Magnetotransistors and MAGFETs are also fabricated in silicon on insulator (SOI) technology. This paper gives a first report focused on the realization and the sensor properties.