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  4. Chemically-assisted ion-beam etching of (AlGa)As/GaAs. Lattice damage and removal by in-situ Cl2 treatment
 
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1999
Journal Article
Title

Chemically-assisted ion-beam etching of (AlGa)As/GaAs. Lattice damage and removal by in-situ Cl2 treatment

Other Title
Chemisch unterstütztes Ionenstrahlätzen von (AlGa)As/GaAs. Kristallschädigung und dessen Beseitigung mittels in-situ Cl2-Gasstrahl-Verfahren
Abstract
We evaluated the lattice damage in Al(0,4)Ga(0,6),As/GaAs Single Quantum Well (SQW) structures caused by Chemically-Assisted Ion-Beam Etching (CAIBE) in comparison with Ion-Beam Etching (IBE) and wet etching. The damage was analyzed by measuring the Photoluminescence (PL) of the SQWs as a function of the etch depth. While IBE (Ekin = 400 eV) causes a damaged region of 27 nm depth, BCl3/Cl2 -CAIBE (Ekin = 400 eV) damages to a depth of 10 nm. An in-situ Cl2- treatment (Cl2-flow = 6 sccm, Tsubstrate = 120 deg C, p = 3 X 10(exp -4) mbar, without plasma) allows a pure chemical removal of the surface layer which was damaged by CAIBE. This combined process facilitates anisotropic etching together with a lattice damage as low as with wet etching.
Author(s)
Daleiden, J.
Kiefer, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Klußmann, S.
Kunzer, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Manz, Christian  
Walther, Martin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Braunstein, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weimann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Microelectronic engineering  
DOI
10.1016/S0167-9317(98)00256-1
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • (AlGa)As/GaAs-SQW structure

  • (AlGa)As/GaAs-SQW Struktur

  • CAIBE

  • dry etching

  • Halbleiter

  • Kristallschädigung

  • lattice damage

  • semiconductor

  • Trockenätzen

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