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Chemically amplified deep ultraviolet resist for positive tone ion exposure

 

Owen, G. ; American Vacuum Society:
41st International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication 1997. Papers
Woodbury, NY: American Institut of Physics, 1997 (Journal of vacuum science and technology. B microelectronics and nanometers)
ISBN: 1-563-96768-5
pp.2355-2357
International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication <41, 1997, Dana Point/Calif.>
English
Conference Paper
Fraunhofer ISIT ()

Abstract
The positive tone deep ultraviolet resist UV II HS-0.6 (Shipley) has been evaluated for ion exposure in the ion projector at the Fraunhofer Institute in Berlin. The chemically amplified resist showed extremely high sensitivity of 1*1012 H+ ions/cm2 at an ion energy of 75 keV. The contrast number was 11. Smallest lines with 65 nm linewidth could be delineated in 140-nm-high resist. At higher resist thickness of 370 nm, lines down to 70 nm were stable showing aspect ratios of >4. The exposure latitude at 100 nm nominal linewidth was +or-10% dose variation for a +or-10% linewidth change.

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