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1995
Conference Paper
Titel
Characterization of residual transition metal ions in GaN and AlN
Alternative
Charakterisierung residuärer Übergangsmetallionen in GaN und AlN
Abstract
In this paper we present photoluminescence (PL), PL excitation and electron paramagnetic resonance (EPR) studies of residual transition metal impurities in a variety of doped and undoped wurtzite GaN epitaxial layers and polycrystailine wurtzite AIN ceramics. For GaN a PL band with a zero-phonon-line (ZPL) at 0.93l eV is frequently observed and is assigned to an intra 3d-shell electronic transition of gallium- substitutional vanadium impurities. Other PL structures with ZPLs at 1.193 and 1.20l eV are observed for GaN and AIN, respectively. An assignment of these luminescences to Ti(2+) or Cr(4+) 3d2-impurities is discussed. Due to Fermi level considerations and due to the fact, that a new Cr(5+) EPR signal from the AlN ceramics seems to be correlated with the 1.20l eV PL, an assignment to Cr(4+) impurities is favored.
Author(s)