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  4. Characterization of hydrogen passivated polycrystalline silicon solar cells
 
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1988
Conference Paper
Title

Characterization of hydrogen passivated polycrystalline silicon solar cells

Abstract
The most important results of characterization of hydrogen implanted polycrystalline silicon solar cells are reported. It is found, that in large grain material the increase of diffusion length due to the passivation of intragrain defects like dislocations is dominating over the reduction of recombination velocity of grain boundaries. Also, a reduction of leakage current through the junction is observed leading to a drastic increase of the shunt resistance. The detailed analysis is presented. (ISE)
Author(s)
Schindler, Roland
Lewalski, N.
Voss, B.
Mainwork
Advances in solar energy technology. Vol.1  
Conference
International Solar Energy Society (Congress) 1987  
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • diffusion length

  • dislocation

  • hydrogen passivation

  • intragrain defect

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