Abstract
The most important results of characterization of hydrogen implanted polycrystalline silicon solar cells are reported. It is found, that in large grain material the increase of diffusion length due to the passivation of intragrain defects like dislocations is dominating over the reduction of recombination velocity of grain boundaries. Also, a reduction of leakage current through the junction is observed leading to a drastic increase of the shunt resistance. The detailed analysis is presented. (ISE)