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  4. Characterization of GaAs/AlGaAs heterostructure quantum wells by microwave absorption
 
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1990
Conference Paper
Title

Characterization of GaAs/AlGaAs heterostructure quantum wells by microwave absorption

Other Title
Charakterisierung von GaAs/AlGaAs Heterostrukturen mittels Mikrowellen Absorption
Abstract
Magnetic-field-dependent microwave absorption is shown to be a useful non-destructive and contact-free technique to study transport behavior in GaAs/AlGaAs devices. It allows quick measurement of resistance, mobility and carrier concentration in the two-dimensional electron gas of heterostructure quantum wells. The two and three dimensional conductivities may be separately evaluated allowing detailed study of conduction in the active layer of high electron mobility (HEMT) devices. Applications of the approach to examination of device structural dependencies, carrier-density conduction behavior and the effects of etch processing on quantum well integrity are presented.
Author(s)
Jantz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Zappe, H.P.
Mainwork
Epitaxial heterostructures. Symposium  
Conference
Symposium on Epitaxial Heterostructures 1990  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • microwaves

  • Mikrowellen

  • Substrat Charakterisierung

  • substrate characterization

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