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Characterization of conducting GaAs multilayers by infrared spectroscopy at oblique incidence

: Grosse, P.; Harbecke, B.; Heinz, B.; Maier, M.; Jantz, W.


Applied physics. A (1990), No.50, pp.7-12 : Abb.,Tab.,Lit.
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396
Journal Article
Fraunhofer IAF ()
carrier concentration; epitaxy; Fourier transform spectroscopy; gallium arsenide; Ladungsträgerkonzentration; reflection spectroscopy; Schichtleitfähigkeit; sheet conductivity

The electrical and geometric properties of GaAs multilayer structures are measured nondestructively by infrared reflectance spectroscopy (50-5000 cm sub -1). Using oblique incidence and both s- and p-polarizations of the probing beam, carrier concentration of the GaAs substrate are determined. The main structures in the spectra are due to phonon restrahlen bands, Fabry-Perot interferences and the zeros of the dielectric function leading to dips in the reflectance (Berreman Mode). The results compare favorably with a depth-resolved secondary ion mass spectrometric (SIMS) sample analysis. The range of applicability of the method is discussed.