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1991
Conference Paper
Titel
Characterization of anodic fluoride films on Hg1-xCdxTe
Alternative
Charakterisierung von anodischen Fluoridschichten auf Hg1-xCdxTe
Abstract
Experimental results concerning the properties of anodic fluoride films grown on Hg1-xCdxTe(0.2 equal or smaller than x equal or smaller than 0.3) are presented and discussed. The analysis of the growth rate and XPS measurements indicate that the films are composed of a mixture of Cd, Hg and Te fluorides, together with unreacted HgTe and elemental Te. The films are characterized by some of their optical, electrical and chemical properties. Capacitance-voltage measurements of MIS devices are employed to determine the electronic properties of the anodic fluoride/HgCdTe interface. The results show that a positive and unstable charge density is present at the interface.