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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Characterization of active layers in GaAs by microwave absorption
Charakterisierung leitender Schichten in GaAs mit Mikrowellen-Absorption
| Applied physics. A (1987), No.45, pp.225-232 : Abb.,Tab.,Lit.
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396 |
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| English |
| Journal Article |
| Fraunhofer IAF () |
| Ladungsträgerbeweglichkeit; Ladungsträgerkonzentration; Meßverfahren; Mikrowellen-Reflexion; Schichtcharakterisierung(elektrisch); Schicht(epitaktisch); Schicht(implantiert) |
Abstract
Free carrier electric microwave absorption is applied to the analysis of ion implanted and epitaxial active layers in GaAs. An improved version of a previously reported waveguide system is described. It allows a quick and nondestructive determination of the sheet resistance, carrier concentration and carrier mobility of active layers. The usefulness of the method for routine electric material characterization supporting a microelectronic device fabrication is demonstrated. Finally, some explorative microwave measurements of heterostructures and photo-induced effects are reported. IAF