Characteristics of a two-component chemically-assisted ion-beam etching techniques for dry etching of high-speed multiple quantum well laser mirrors

We have developed a two-component chemically-assisted ion-beam etching (CAME) technique for dry-etching of high-speed multiple quantum well (MQW) laser mirrors. This two-component process relaxes several constraints in the dry-etching of AI containing opto-electronic device structures with Cl2 alone. The strained 3 x 100 My square meter In0.35 Ga0.65 As/GaAs undoped and p-doped 4-QW ridge waveguide lasers containing GaAs/AlAs binary short-period superlattice cladding layers with cavities fabricated by this CAME technique demonstrate record direct modulation bandwidths of 24 GHz(Ibias=25mA) and 33 Ghz (Ibis=65mA), respectively.