Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements
Bestimmung von Ladungsträger-Transporteigenschaften in undotierten In(0.35)Ga(0.65)As/GaAs-MQW-Lasern aus Hochfrequenz-Impedanzmessungen
| Institute of Electrical and Electronics Engineers -IEEE-:
LEOS '94. 7th Annual Meeting. Conference Proceedings. Vol.1
New York/N.Y., 1994
pp.161-162 : Abb. |
| IEEE Lasers and Electro-Optics Society (Annual Meeting) <7, 1994, Boston> |
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| English |
| Conference Paper |
| Fraunhofer IAF () |
| carrier escape time; high-frequency impedance; Hochfrequenzimpedanz; InGaAs/GaAs; Ladungsträgeremissionszeit; MQW |