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  4. Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements
 
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1994
Conference Paper
Title

Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements

Other Title
Bestimmung von Ladungsträger-Transporteigenschaften in undotierten In(0.35)Ga(0.65)As/GaAs-MQW-Lasern aus Hochfrequenz-Impedanzmessungen
Author(s)
Esquivias, I.
Weisser, S.
Romero, B.
Tasker, P.J.
Ralston, J.D.
Rosenzweig, Josef  
Arias, J.
Mainwork
LEOS '94. 7th Annual Meeting. Conference Proceedings. Vol.1  
Conference
IEEE Lasers and Electro-Optics Society (Annual Meeting) 1994  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • carrier escape time

  • high-frequency impedance

  • Hochfrequenzimpedanz

  • InGaAs/GaAs

  • Ladungsträgeremissionszeit

  • MQW

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