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Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
Emissionszeit von Ladungsträgern in GaAs/AlGaAs und InGaAs/GaAs Quantenfilmlasern
: Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J.
|Morton, P.A.; Crawford, D.L. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:|
High-speed semiconductor laser sources : 1-2 February 1996, San Jose, California
Bellingham, Wash.: SPIE, 1996 (SPIE Proceedings Series 2684)
|Conference "High-Speed Semiconductor Laser Sources" <1996, San Jose/Calif.>|
| Conference Paper|
|Fraunhofer IAF ()|
| carrier transport; electrical impedance; elektrische Impedanz; Ladungsträgertransport; QW-laser; Temperaturabhängigkeit; temperature dependence|
The transport of carriers along the confinement region, the carrier capture into, and the carrier escape out of the quantum wells (QWs) are limiting processes affecting the high-frequency properties of QW lasers. The influence of these processes on the laser performance depends mainly on the ratio of the effective carrier transport/capture time and the effective escape time. We present experimental results about the escape times for GaAs/A1GaAs and InGaAs/GaAs high-speed QW lasers with varied geometrical dimensions (cavity width and length), number of QWs, In-concentrations, and p-doping levels in the active region, as extracted from electrical impedance measurements in the sub-threshold regime. In addition to the expected increase of the escape time with increasing QW barrier height, we observe an important increase in the escape time for lasers with p-doping. The escape time dependences on the carrier concentration and on the temperature are determined and discussed.