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Capture of carriers excited by interband and intersubband absorption in GaAs/AlAs/AlGaAs double-barrier quantum wells

Einfang von Ladungsträgern, welche durch Interband- und Intersubband-Absorption in Ga/AlAs/AlGaAs Doppelbarrieren-Quantumwells angeregt werden


Superlattices and Microstructures 16 (1994), pp.331-334
ISSN: 0749-6036
Journal Article
Fraunhofer IAF ()
carrier capture time; Doppelbarrieren-Quantumwell; double-barrier quantum well; Ladungsträgereinfangzeit; time resolved photoluminescence; zeitaufgelöste Photolumineszenz

We report on the carrier dynamics in n-type double-barrier quantum well structures in an electric field. Both the intersubband and interband photocurrents, excited by long-wavelength (4 mym) and short-wavelength (0.5mym) radiation, respectively, show a photovoltaic asymmetry with respect to the applied field. This asymmetry arises from an internal field due to an asymmetric dopant distribution with respect to the well centers. Time-dependent photoluminescence measurements allow us to determine the field dependence of the electron and hole capture times.