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Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology.

Breitbandiger Kleinleistung-Verstärker mit hoher Verstärkung und Mischer-Funktion auf der Basis von Quantentopf GaAs FET Technologie
 

Electronics Letters 28 (1992), No.13, pp.1241-1243 : Abb.,Lit.
ISSN: 0013-5194
English
Journal Article
Fraunhofer IAF ()
amplifier; Feldeffekttransistor; field effect transistor; Halbleiterheteroübergang; semiconductor junction; Verstärker

Abstract
A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0.3 Mym gate lengths. In amplifier mode with unmatched input and single ended output the chip exhibits 30 dB gain and 6.5 GHz bandwidth. Matching extends the bandwidth to 9.0 GHz. In mixer mode at 12 GHz input frequency and 1.5 GHz IF frequency the chip shows 11.5 dB conversion gain. The chip has a power dissipation of 125 mW at a supply voltage of 3.50 V.

: http://publica.fraunhofer.de/documents/PX-6939.html