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  4. Binding energies of shallow donors in semi-insulating GaAs
 
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1987
Journal Article
Title

Binding energies of shallow donors in semi-insulating GaAs

Abstract
We have used photoluminescence from two electron satellites of donor-bound excitons as well as selective pair luminescence spectroscopy to study shallow donor levels in semi-insulating bulk GaAs. Bound exciton spectroscopy gives a donor binding energy equal to the effective mass value (5.8 meV) for all samples investigated. Selective pair luminescence, in contrast, yields a sample-dependent value for the average donor binding energy, which varies between 5.8 and approximately 7 meV. This discrepancy is attributed to the fact that bound exciton spectroscopy probes all donor levels whereas selective pair luminescence is sensitive to donors close to acceptors which are therefore more strongly disturbed. (IAF)
Author(s)
Ramsteiner, M.
Wagner, J.
Journal
Journal of applied physics  
DOI
10.1063/1.339514
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Bindungsenergie

  • Donatoren(flach)

  • Gallium Arsenid

  • Photolumineszenz

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