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Behavior of analog MOS integrated circuits at high temperatures

: Krey, D.; Dalsaß, K.-G.; Hosticka, B.J.; Zimmer, G.

IEEE journal of solid-state circuits 20 (1985), No.4 : Abb.,Tab.,Lit.
ISSN: 0018-9200
Journal Article
Fraunhofer IMS ()

High-temperature behavior of analog MOS circuits is investigated. Thermal effects on small-signal characteristics of MOS transistors are studied and parameters of MOS amplifier operating at high temperatures are calculated. The predicted performance has been experimentally verified and high-temperature measurements of an operational amplifier and a switched-capacitor precision amplifier are presented. (IMS)