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Stress compensation techniques in thin layers applied to silicon micromachining

 
: Mück, G.; Bausells, J.; Csepregi, L.; Moldovan, N.; Suski, J.; Lang, W.

1992
MAT-TEC <1992, Grenoble>
English
Conference Proceedings
Fraunhofer IFT; 2000 dem IZM eingegliedert
polysilicon; silicon nitride; stress; stress compensation; thin films

Abstract
Thin films used in silicon technology exhibit internal stress after deposition. If this stress is reduces by a stress compensation method the technological use is substantionally increased. Three systems wre investigated: 1. Silicon nitride and oxide compensated by ion implantation 2. Silicon oxide/nitride sandwich layers 3. Polysilicon, compensated by appropriate deposition temperature, doping and annealing.

: http://publica.fraunhofer.de/documents/PX-57145.html