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Batch process for the production of single crystal silicon membranes by the use of SIMOX-wafers

 
: Belz, J.; Dura, H.-G.; Mokwa, W.; Vogt, H.; Zimmer, G.

TU Berlin:
Micromechanics Europe 1990. Technical Digest
Berlin/West, 1990
Workshop on Micromachining, Micromechanics and Microsystems <2, 1990, Berlin/West>
Micromechanics Europe (MME) <2, 1990, Berlin/West>
English
Conference Paper
Fraunhofer IMS ()
Sensorfertigung; Silizium-Membranen; SIMOX-Anwendungen

Abstract
In this work, we report upon a technique for production of single crystal silicon membranes by the use of buried oxide layers as an etch stop. Fabrication starts with a silicon wafer having (100)-orientation. During oxygen implantation and subsequent high temperature annealing, a thin buried silicon dioxide layer of about 5 micrometer is grown on top. In the first experiment, using silicon nitride as a protection layer, large flat membranes up to 1 qcm could be fabricated. Chosing a sandwich layer of oxide/nitride the membranes were found buckling.

: http://publica.fraunhofer.de/documents/PX-5637.html