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Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy

Bandlückennormalisierung und Bandauffüllung in Si-dotierten GaN-Filmen untersucht mittels Photolumineszenzspektroskopie


Journal of applied physics 86 (1999), No.8, pp.440 ff.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()
band-gap renormalization; Bandlückenrenormalisierung; GaN; photoluminescence; Photolumineszenz; Si doping; Si-Dotierung

We have studied band-gap renormalization and band filling in Si-doped GaN films with free-electron concentrations up to 1.7 x 10(exp19) cm(-3) , using temperature-dependent photoluminescence (PL) spectroscopy. The low-temperature (2 K) PL spectra showed a line-shape characteristic for momentum nonconserving band-to-band recombination. The energy downshift of the low-energy edge of the PL line with increasing electron concentration n, which is attributed to band-gap renormalization (BGR) effects, could be fitted by a n(1/3) power law with a BGR coefficient of - 4.7 X 10(exp-8) eV cm. The peak energy of the room-temperature band-to-band photoluminescence spectrum was found to decrease as the carrier concentration increases up to about 7 X 10(exp18) cm(-3) followed by a high-energy shift upon further increasing carrier concentration, due to the interplay between the BGR effects and band filling. The room-temperature PL linewidth showed a monotonic increase with carrier concentration, whic h could be described by a n(2/3) power-law dependence.