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1988
Journal Article
Titel
Band-gap narrowing in heavily doped silicon - a comparison of optical and electrical data.
Alternative
Bandlücken-Reduzierung in hochdotierten Silizium - Ein Vergleich von optischen und elektrischen Messdaten
Abstract
The band-gap narrowing in heavily doped silicon has been studied by optical techniques-namely, photoluminescence and photoluminescence excitation spectroscopy-and by electrical measurements on bipolar transistors. The optical experiments give a consistent set of data for the band-gap narrowing in n- and p-type material at low temperatures as well as at room temperature. A good agreement is found between the optical and electrical data removing the discrepancies existing so far in the literature. (IAF)