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Band discontinuitres in the (Pb, Eu)Se system determined by frequency-dependent admittance analysis

Bandsprünge im (Pb, Eu)Se System, mit Inpedanzanalyse gemessen
: Xu, J.; Steiner, K.; Tacke, M.


Applied Physics Letters 65 (1994), No.1, pp.10-12 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IPM ()
Heterostruktur; narrow gap semiconductor; Schmalband-Halbleiter

Band discontinuities in anisotype Pb(ind 1-x) Eu(ind x) Se/PbSe single heterojunctions are determined using frequency dependent admittance analysis. A four component small signal equivalent circuit model is proposed to describe the diode admittance. Good agreement between the simulation results and experimental data have been obtained. The band discontinuities are evaluated at 130 K for x less than 0.05.