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  4. Band discontinuitres in the (Pb, Eu)Se system determined by frequency-dependent admittance analysis
 
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1994
Journal Article
Title

Band discontinuitres in the (Pb, Eu)Se system determined by frequency-dependent admittance analysis

Other Title
Bandsprünge im (Pb, Eu)Se System, mit Inpedanzanalyse gemessen
Abstract
Band discontinuities in anisotype Pb(ind 1-x) Eu(ind x) Se/PbSe single heterojunctions are determined using frequency dependent admittance analysis. A four component small signal equivalent circuit model is proposed to describe the diode admittance. Good agreement between the simulation results and experimental data have been obtained. The band discontinuities are evaluated at 130 K for x less than 0.05.
Author(s)
Xu, J.
Steiner, K.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Tacke, M.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
Applied Physics Letters  
DOI
10.1063/1.113050
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • Heterostruktur

  • narrow gap semiconductor

  • Schmalband-Halbleiter

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