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Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients

: List, S.; Pichler, P.; Ryssel, H.


Microelectronics journal 26 (1995), pp.261-264
ISSN: 0026-2692
ISSN: 0959-8324
Journal Article
Fraunhofer IIS B ( IISB) ()
Diffusionsmechanismus; Gitterleerstellen; Paardiffusion

A new approach is used for the calculation of transport coefficients for dopants and vacancies from atomic jump frequencies in the presence of dopant or vacancy gradients. Results are shown for the diffusion under vacancy gradients with an attractive potential between the dopant and the defect. It is demonstrated that for a given vacancy gradient not only the absolute value but also the sign of the dopant flux depends on the range of the binding potential.