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Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients

 
: List, S.; Pichler, P.; Ryssel, H.

Baccarani, G.; Rudan, M.; Selberherr, S.; Stippel, H.; Strasser, E.:
Simulation of semiconductor devises and processes : Fifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93), held at the Technical University of Vienna, Austria, September 7 - 9, 1993
Wien: Springer, 1993 (Simulation of semiconductor devices and processes 5)
ISBN: 0-387-82504-5
ISBN: 3-211-82504-5
pp.97-100
International Conference on Simulation of Semiconductor Devices and Processes (SISDEP) <5, 1993, Vienna>
English
Conference Paper
Fraunhofer IIS B ( IISB) ()
Diffusionsmechanismus

Abstract
A new approach is used for the calculation of transport coefficients for dopants and vacancies from atomic jump frequencies in the presence of dopant or vacancy gradients. Results are shown for the diffusion under vacancy gradients with an attractive potential between the dopant and the defect. It is demonstrated that for a given vacancy gradient not only the absolute value but also the sign of the dopant flux depends on the range of the binding potential.

: http://publica.fraunhofer.de/documents/PX-4800.html