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Atomistic analysis of the vacancy diffusion mechanism

Atomistische Analyse des Leerstellen-Diffusionsmechanismus
 
: List, S.; Ryssel, H.

IEEE Electron Devices Society; Japan Society of Applied Physics -JSAP-:
International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96
Tokyo: Business Center for Academic Societies Japan, 1996
ISBN: 0-7803-2745-4
ISBN: 0-7803-2746-2
pp.27-28 : Ill., Lit.
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <1, 1996, Tokyo>
English
Conference Paper
Fraunhofer IIS B ( IISB) ()
atomistic model; atomistisches Modell; diffusion mechanism; Diffusionsmechanismus; Halbleitertechnologie; semiconductor technology

: http://publica.fraunhofer.de/documents/PX-4798.html