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  4. Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAs
 
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1995
Journal Article
Title

Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAs

Other Title
Kontrolle des Einbaus von Si-Dotierschichten mit untrahoher Konzentration in GaAs auf atomisierter Skala
Abstract
Delta-doped GaAs: Si with doping densities up to 4 X 10(14) square centimetre has been grown by molecular beam epitaxy (MBE) at a substrate temperature of 590 degree. To promote an ordered incorporation and thus avoid clustering of Si atoms. vicinal GaAs(O01) surfaces 2 degree misoriented towards (111)Ga were used and Si was supplied in pulses. As evidenced by real-time reflection high-energy electron diffraction (RHEED) measurements an ordered incorporation of Si atoms on Ga sites along the step edges takes place. Although the ordered (3 x 2) structure degrades at high coverages, unusual high sheet carrier concentrations are obtained by pulsed delta-doping for doping concentrations > 10(13) square centimetre , as revealed by Hall measurements. The surface conditions during GaAs overgrowth have a strong influence on the free electron concentration. too. Raman scattering by local vibration modes and secondary ion mass spectrometry (SIMS) measurements are used to show that this is relate d to segregation effects as well as to a modification of the site occupancy.
Author(s)
Däweritz, L.
Hey, R.
Ramsteiner, M.
Wagner, J.
Maier, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kostial, H.
Behrend, J.
Höricke, M.
Journal
Journal of Crystal Growth  
DOI
10.1016/0022-0248(94)00709-8
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • MBE

  • Si delta-doping

  • Si delta-Dotierung

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