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ASWR - method for the simulation of dopant redistribution in silicon

ASWR - Methode zur Simulation der Dotierungsdiffusion in Silizium
: Lorenz, J.; Svoboda, M.

Baccarani, G.; Rudan, M.; Selberherr, S.; Stippel, H.; Strasser, E.:
SISDEP '88. 3rd International Conference on Simulation of Semiconductor Devices and Processes. Proceedings
Wien: Springer, 1988 (Tecnoprint 3)
pp.243 ff
International Conference on Simulation of Semiconductor Devices and Processes (SISDEP) <3, 1988, Bologna>
Conference Paper
Fraunhofer IIS B ( IISB) ()
Algorithmen; Differentialgleichung(partiell); diffusion; Finite-Elemente-Methode (FEM); Halbleitertechnologie; Lösung(schwach); Prozeßsimulation

An Asymmetric Weighted Residual (ASWR) method has been developed for the application in the universal two-dimensional process simulation program COMPOSITE. This approach which is quite similar to Finite Elemente includes an adaptive mesh and allows the numerical solution of the system of coupled stiff partial differential equations necessary to describe dopant diffusion in silicon with high accuracy and a small number of meshpoints. In this paper, an outline of the method is given and the implementation in COMPOSITE is described. (AIS-B)