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  4. AsGa antisite defects in LT GaAs as studied by magnetic resonance and magneto-optical techniques.
 
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1992
Journal Article
Title

AsGa antisite defects in LT GaAs as studied by magnetic resonance and magneto-optical techniques.

Other Title
Magnetooptische Untersuchungen und magnetische Resonanz von AsGa Antisite Defekten in MBE LT GaAs
Abstract
GaAs epitaxial layers grown by molecular beam epitaxy (MBE) at low temperature (LT) have been characterized by electron spin resonance (ESR) infrared absorption, magnetic circular dichroism (MCD) and optically detected magnetic resonance (ODMR) via MCD . The data prove that AssubGa antisite defects contribute to the below-gap infrared absorption of LT MBE GaAs layers. Furthermore it is found that ESR-spectra of LT GaAs epitaxial layers are very similar to those observed in fast neutron irradiated bulk GaAs crystals.
Author(s)
Jost, W.
Kaufmann, U.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schneider, J.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Alt, H.C.
Kunzer, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Semiconductor Science and Technology  
DOI
10.1088/0268-1242/7/11/017
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • AsGa antisite

  • MBE LT GaAs

  • MCD

  • MCD-ESR

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