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AsGa antisite defects in LT GaAs as studied by magnetic resonance and magneto-optical techniques.

Magnetooptische Untersuchungen und magnetische Resonanz von AsGa Antisite Defekten in MBE LT GaAs

: Jost, W.; Kaufmann, U.; Schneider, J.; Köhler, K.; Alt, H.C.; Kunzer, M.

	Semiconductor Science and Technology 7 (1992), pp.1386-1389 : Abb.,Lit. ISSN: 0268-1242 ISSN: 1361-6641

	English
	Journal Article
	Fraunhofer IAF ()
	AsGa antisite; MBE LT GaAs; MCD; MCD-ESR

Abstract
GaAs epitaxial layers grown by molecular beam epitaxy (MBE) at low temperature (LT) have been characterized by electron spin resonance (ESR) infrared absorption, magnetic circular dichroism (MCD) and optically detected magnetic resonance (ODMR) via MCD . The data prove that AssubGa antisite defects contribute to the below-gap infrared absorption of LT MBE GaAs layers. Furthermore it is found that ESR-spectra of LT GaAs epitaxial layers are very similar to those observed in fast neutron irradiated bulk GaAs crystals.

: http://publica.fraunhofer.de/documents/PX-4662.html