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Arsenic ion implantation in Hg1-XCdXTe.

Arsen-Ionenimplantation in Hg1-XCdXTe
: Baars, J.; Seelewind, H.; Kaiser, U.; Ziegler, J.; Fritzsche, C.

Journal of Crystal Growth (1988), No.86, pp.762-767 : Abb.,Lit.
ISSN: 0022-0248
Journal Article
Fraunhofer IAF ()
annealing; diffusion; elektrische Aktivität; Quecksilber-Kadmium-Tellurid

Arsenic was implanted in Hg sub (1 - kappa) Cd sub kappa Te(0.19 equal or smaller than kappa equal or smaller 0.23) of n-type (electron concentrations in the range from 10 high 14 to 10 high 15 cm high (-3) at 77 K). The implantations were carried out using fluences between 10 high 14 and 5 mal 10 high 15 cm high (-2) and ion energies of 350 keV while the samples were kept at room temperature. The charge carrier concentration at 300 K was determined by analysing the infrared reflectance in the plasma resonance regions. Thermoelectric probing was also applied for determining the conduction type and the carrier concentration. Subsequently the implanted samples were annealed in saturated Hg vapour for 30 to 45 min at temperatures of 200. 300. 400 and 500 degree C. It was found that the As concentration profiles analysed by SIMS were not affected by annealing. The results suggest that the majority of the implanted As forms charge-compensating complexes (presumably involving oxygen) that ar e electrically inactive and highly immobile in the lattice. It appears. however. that annealing at 400 degree C and above causes some of the implanted As to become electrically active as acceptors.