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1985
Journal Article
Titel
Application of the simulator "XMAS" on specific problems in sub-half micron lithography
Abstract
The program XMAS, which allows the simulation of 3-D resist profiles in x-ray lithography has been used to evaluate the ultimate resolution capability and the replication of defects of this lithography method. It has been shown that 0.2 micrometers structures can be transferred with high process latitude at reasonable proximity gaps (30 micrometers). Dust particles (silicon, resist) up to 0.5 micrometers thickness do not seriously deteriorate the pattern transfer.