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X-ray mask repair by electron beam induced metal deposition

 
: Brünger, W.H.

Microelectronic engineering 9 (1989), No.1-4, pp.171-174
ISSN: 0167-9317
International Conference on Microlithography: Microcircuit Engineering (ME) <14, 1988, Wien>
English
Conference Paper
Fraunhofer ISIT ()
electron beam deposition; masks; tungsten; X-ray lithography

Abstract
The electron beam induced metal deposition is a powerful technique to repair clear X-ray mask defects in the sub- mu m range. The initial growth rate of dots deposited at 10 keV e-beam energy and 3 nA/ mu m2 current density was 10 nm/sec. Dots of different heights were exposed to synchrotron radiation. Dot growth times of 150 sec gave sufficient X-ray contrast for pattern transfer into HPR 204 resist. Mask repair is demonstrated on a test structure by closing clear defects and adding lines. The spatial resolution of deposited structures is