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  4. X-ray mask repair by electron beam induced metal deposition
 
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1989
Journal Article
Title

X-ray mask repair by electron beam induced metal deposition

Abstract
The electron beam induced metal deposition is a powerful technique to repair clear X-ray mask defects in the sub- mu m range. The initial growth rate of dots deposited at 10 keV e-beam energy and 3 nA/ mu m2 current density was 10 nm/sec. Dots of different heights were exposed to synchrotron radiation. Dot growth times of 150 sec gave sufficient X-ray contrast for pattern transfer into HPR 204 resist. Mask repair is demonstrated on a test structure by closing clear defects and adding lines. The spatial resolution of deposited structures is <or=500 nm with aspect ratios up to 6.
Author(s)
Brünger, W.H.
Journal
Microelectronic engineering  
Conference
International Conference on Microlithography: Microcircuit Engineering (ME) 1988  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • electron beam deposition

  • masks

  • tungsten

  • X-ray lithography

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