Abstract
The electron beam induced metal deposition is a powerful technique to repair clear X-ray mask defects in the sub- mu m range. The initial growth rate of dots deposited at 10 keV e-beam energy and 3 nA/ mu m2 current density was 10 nm/sec. Dots of different heights were exposed to synchrotron radiation. Dot growth times of 150 sec gave sufficient X-ray contrast for pattern transfer into HPR 204 resist. Mask repair is demonstrated on a test structure by closing clear defects and adding lines. The spatial resolution of deposited structures is

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