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Wire-Like ordering of Si dopant atoms on GaAs-001- vincinal surgaces studied by raman scattering

Drahtartige Anordnung von Si-Dotieratomen auf verkippten GaAs -100-Oberflächen untersucht mittels Ramanstreuung

Lockwood, D.J.:
22nd International Conference on the Physics of Semiconductors 1995. Vol. 2
Singapore: World Scientific, 1995
ISBN: 981-02-2979-8
pp.1691-1694 : Abb.,Lit.
International Conference on the Physics of Semiconductors <22, 1995, Vancouver>
Conference Paper
Fraunhofer IAF ()
GaAs; Quantendraht; quantum wire; raman spectroscopy; Ramanspektroskopie; Si delta-doping; Si delta-Dotierung

Raman scattering in resonance with Edeep0 + Deltadeep0 band gap of GaAs has been used to study the ordered incorporation of Si dopant atoms on GaAs(001) vicinal surfaces. A Raman excitation at 120 cmhighminus1 was observed for a series of Delta-doped samples. The observed shape of the spectra can be explained by excitations of photo-created near-surface holes with a peak at 120cmhighminus1 overlapping with nonequilibrium huminescence at the Edeepo +Deltadeep0 band edge. A pronounced polarization asymmetry in the scattering intensity of this excitation was observed in a sample grown under conditions favorable for wire-like Si incorporation. The sensitivity of this polarization asymmetry to the wire-like dopant incorporation seems to be even stronger than that previously observed for intersubband plasmon-phonon modes excited in resonance with E1 band gap of GaAs.