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Wafer slicing by internal diameter sawing

 
: Steffens, K.; König, W.; Struth, W.

Precision engineering 10 (1988), No.1, pp.29-34 : Abb.
ISSN: 0141-6359
ISSN: 0401-6459
Society of Photo-Optical Instrumentation Engineers <1987, Den Haag>
English
Conference Paper
Fraunhofer IPT ()
cutt-off grinding; dislocation; flatness; grinding; silicon; wafer slicing semiconductor

Abstract
Internal Diameter Sawing (IDS) is the commonly used technique for slicing hard and brittle materials, such as semiconductive silicon and germanium or ceramics and glasses. Nevertheless, productivity and yield are relatively low on account of difficulty in handling the flexible tool. Increasing workpiece dimensions leads to greater problems in realizing quality requirements, such as high flatness, low roughness, and low crystal damage. This paper deals with basic relationships in IDS, applying to all workpiece materials (in terms of geometry and kinematics), as well as those relating specifically to monocrystalline silicon (in terms of cutting mechanism, lattice damage and flatness). Finally, guidelines are given to improve process reliability. (IPT)

: http://publica.fraunhofer.de/documents/PX-41075.html