Vorrichtung zur plasmaunterstuetzten Bearbeitung von Substraten
Date Issued
1999
Author(s)
Heinrich, F.
Hoffmann, P.
Patent No
1991-4118973
Abstract
The description relates to a device for the plasma-aided processing of substrates having a recipient in which ions formed in the plasma and reactive neutral particles (radicals) affect the substrate. The invention is characterized by the provision of means for the variation of the plasma volume to control the absolute value of the ion and radical flow densities on the surface of the substrate.