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Patent
Title

Vorrichtung zur Plasmaerzeugung

Other Title
Device for plasma generation
Abstract
The invention relates to a device for plasma generation by the inductive coupling of RF energy by means of an antenna. A problem of the purely inductive coupling is that electrical potentials which lead to a capacitive component of plasma generation occur on the antenna due to the finite inductance. This capacitive component is undesired since it leads to excessively high plasma potentials which have a negative impact on substrate treatment. The device according to the invention is characterized by an antenna which fully encloses the plasma production chamber in the form of a ring, whereby the two antenna feeders are linked to the ring and opposite points of the ring. A definite reduction in the capacitive component of the plasma generation compared with existing devices results from the low inductance of this antenna. The simple shape of the antenna permits a compact construction of the device. The main application of the device for plasma generation according to the invention is in t he plasma-assisted treatment of substrates in semiconductor production.
Inventor(s)
Baenziger, U.
Neumann, G.
Scheer, H.C.
Link to Espacenet
http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&locale=en_EP&FT=D&CC=DE&NR=4403125A
Patent Number
1994-4403125
Publication Date
1998
Language
German
Fraunhofer-Institut für Siliziumtechnologie ISIT  
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