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Title
Vorrichtung und Verfahren zur gezielten Probenbearbeitung, vorzugsweise von Halbleiterbauelementen, mittels einer Ionen-Feinstrahlanlage
Date Issued
1997
Author(s)
Koehler, B.
Bischoff, L.
Teichert, J.
Patent No
1996-19606478
Abstract
The appliance has anion beam source (Q) to generate a ion beam focussed on a surface of the specimen (T). The beam (2) generates sound waves in the specimen which are detected by a sensor (AS) located on the specimen which feeds signals to an evaluator for providing spatial coordination between beam and specimen. The evaluator can be suitable for generation of an image to provide a visual representation of the specimen surface or a cross-section of its profile. The beam can be pulsed and have a diameter of approximately 100 nm whilst the sensor can be a piezo-electric sensor with an integrated pre-amplifier. USE/ADVANTAGE - In microelectronic and micro system applications. Enables hidden structures to be formed and provides for visual monitoring of actual position of beam and specimen surface.
Language
de
Patenprio
DE 1996-19606478 A: 19960221