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Very broad band TWAs to 80 GHz on GaAs substrate

Sehr breitbandige Kettenverstärker bis 80 GHz auf GaAs-Substrat


23rd European Microwave Conference '93. Proceedings
pp.372-373 : Abb.,Lit.
European Microwave Conference (EuMC) <23, 1993, Madrid>
Conference Paper
Fraunhofer IAF ()
Breitbandverstärker; cascode; distributed amplifier; Kettenverstärker; MODFET; traveling wave amplifier

Traveling Wave Amplifiers were fabricated successfully with a gain of 9.3 dB + 0.6 dB in the frequency range from 5 GHz to 80 GHz measured on-wafer. The associated input and output matching are better than -10 dB up to 70 GHz. To our knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. Each TWA stage comprises a cascode pair of transistors with 0.16 mym gate length. For the first time Cascode transistors in CPW-technology were used for a TWA achieving a gain bandwidth product of 744 GHz *dB.