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Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.

Vertikaler kompakter 15 GHz GaAs/AlGaAs multiple quantum well Laser, hergestellt mittels MBE


Electronics Letters 27 (1991), No.19, pp.1720-1722 : Abb.,Lit.
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()
GaAs; Halbleiterlaser; high frequency modulation; Hochfrequenzmodulation; quantum wells; semiconductor laser

A GaAs/AlxGa1-xAs multiple quantum well laser with an electrical modulation bandwidth exceeding 15 GHz has been fabricated. Optimised design of the waveguide, including development of high Al mole fraction (x equal 0.8) cladding layers, together with a coplanar electrode geometry, has resulted in a vertically compact laser structure suitable for integration.