Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Verfahren zur Herstellung von TiN-Schichten und die mit diesem Verfahren hergestellte Schicht

Forming titanium nitride layer on substrate using CVD - by using titanium alcoholate as precursor and nitrogen -contg. plasma gases, giving titanium nitride layers of excellent conformity.
 
: Weber, A.; Poeckelmann, R.; Klages, C.-P.

:
Frontpage ()

DE 1995-19506579 A: 19950224
DE 1995-19506579 A: 19950224
DE 19506579 C2: 19961212
C23C0016
German
Patent, Electronic Publication
Fraunhofer IST ()

Abstract
The process for forming TiN layers on a substrate using CVD in conjunction with N-contg. plasma gases, involves using Ti alcoholate(s) of formula Ti(OR)4 as precursor, where R = alkyl, and working in the remote or downstream region of the plasma. USE - Used as diffusion barriers in very highly integrated circuits. ADVANTAGE - The process gives TiN layers with excellent conformity and gives virtually complete covering of edges.

: http://publica.fraunhofer.de/documents/PX-39362.html