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Title
Verfahren zur Herstellung integrierter Schaltkreise
Date Issued
1999
Author(s)
Haberger, K.
Plettner, A.
Patent No
1997-19750167
Abstract
NOVELTY - The production method has integrated circuits formed in the surface of a semiconductor substrate (3) before modification of the substrate material in a layer (7) beneath the surface layer, with subsequent separation of the surface layer containing the integrated circuits from the modified underlying layer by heating the latter. DETAILED DESCRIPTION - An INDEPENDENT CLAIM for a method for production of components containing solar cells, micromechanical actuators and/or sensors is also included. USE - The production method is used to provide integrated circuits on thin semicnductor layers using traditional semiconductor wafers as the starting material, e.g. for silicon CMOS technology. ADVANTAGE - The production method allows the substrate used as the starting material to be re-used and enables individual chips to be detached from a semiconductor wafer. DESCRIPTION OF DRAWING(S) - The figures show cross-sections through a semiconductor wafer during a CMOS process. Semiconductor substrate 3 Modified substrate layer 7
Language
de
Patenprio
DE 1997-19750167 A: 19971112