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Verfahren zum Herstellen einer Halbleiterstruktur fuer eine integrierte Leistungsschaltung mit einem vertikalen Leistungsbauelement

Process for the production of an integrated power circuit comprising a vertical power component
 
: Gassel, H.; Muetterlein, B.; Vogt, H.; Zimmer, G.

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Frontpage ()

DE 1991-4139394 A: 19911129
DE 1992-4201910 A: 19920124
EP 1992-923661 A: 19921112
DE 4201910 C2: 19950511
EP 614573 A: 19940914
H01L0021
German
Patent, Electronic Publication
Fraunhofer IMS ()

Abstract
An integrated power circuit comprises either a vertical power component and a control circuit for controlling the vertical power component, or only vertical power components. In order to prevent the undesired impacts of switching operations of the vertical power component on the control circuit, the manufacturing process of the integrated power circuit includes the application of an etching resist layer below the semiconductor area destined for the control circuit, after which the control circuit and the vertical power conductor are produced by means of known process steps. Finally, a protective layer is applied to the front side of the wafer and a mask layer on the back side of the wafer. After the mask is structured to produce an opening below the etching resist layer, the back side of the substrate is etched down to the etching resist layer. Alternatively, after performing the process steps to produce the vertical power components and after producing a lateral insulator layer betwee n the vertical power components, a front-side protective layer and a back-side mask layer are produced, following which the back-side mask layer is provided with a recess below the lateral insulator layer through which the back side of the substrate is etched down to the lateral insulator layer.

: http://publica.fraunhofer.de/documents/PX-38851.html