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Title
Verfahren zum Erzeugen einer Siliziumdioxidschicht auf Oberflaechenabschnitten einer Struktur
Date Issued
2002
Author(s)
Grassl, T.
Engelhardt, M.
Patent No
1995-19528746
Abstract
Prodn. of a SiO2 layer on surface sections of a structure involves (a) anisotropically dry etching a semiconductor arrangement (200) to produce, in its surface, a structure (202) with sidewall sections (208) and a bottom section (206); (b) cleaning the structure for complete removal of etching residues from the sidewall sections (208) while retaining modifications of the bottom section; and (c) depositing SiO2, using an organic silicon precursor and ozone at 200-400 deg.C and 0.2-1.0 x 105 Pa pressure, onto the structure (202). USE - E.g. to produce a spacer in a hole or trench to achieve lateral isolation. ADVANTAGE - The method ensures that damage, modification and/or contamination occurs entirely at the bottom of the structure so that SiO2 on the bottom section is suppressed, thus eliminating the need for an additional etching operation.
Language
de
Patenprio
DE 1995-19528746 A: 19950804