Verfahren zum Erzeugen einer isolierten, einkristallinen Siliziuminsel
Date Issued
1994
Author(s)
Vogt, Holger
Patent No
1990-4006158
Abstract
An insulated monocrystalline silicon island is generated by the following process steps: oxygen implantation for the generation of a buried insulated SiO<-2 layer in a highly doped silicon region, annealing of the layer structure, deposition of a low-doped monocrystalline silicon epitaxy layer, generation of a trench etch mask, definition of the trench by means of photolithography and etching of the same down to the buried SiO<-2 layer, incorporation of a high doping in the trench side walls, isolation of the same and refilling the trench.